It is one of the research hotspots of condensed matter physics to regulate the physical transition of transition metal oxides through field effect structures. Due to the disadvantage of the use of traditional gate material field-effect structures with weak carrier modulation (<1013cm-2), the carrier concentration (~1014cm-2) of the associated electron oxide cannot be controlled effectively. The researchers have been In the search for new ways to carry out transitional metal oxide field effect regulation. In recent years, the development of double-layer transistor structures using ionic liquids as gate materials has rapidly attracted the attention of researchers, and the potentials mainly fall on the electric double layer with a liquid/solid interface thickness of about 1 nanometer, corresponding to carriers. The concentration can be higher than 1014cm-2, and based on this novel structure, the regulation of the transition and superconductivity of the metal insulator of various materials including transition metal oxides has been achieved. However, recent studies have shown that the strong electric field at the interface between ionic liquids and transition metal oxides induces the migration of oxygen ions, leading to changes in physical properties.
Institute of Physics, Chinese Academy of Sciences/Beijing National Laboratory for Condensed Matter Physics (King) Jin Kuijuan and Academician Yang Guoxuan of the Chinese Academy of Sciences led the L03 group to research on the preparation of high quality transition metal oxide films and their physical properties by laser molecular beam epitaxy. A series of studies have been conducted on the important role of oxygen vacancies in the metaphase of transition metal oxide properties (Sci. Rep. 5, 11335, 2015; Sci. Rep. 3, 2618, 2013). Recently, in response to the controversy over the mechanism of ionic liquids in the regulation of transition metal oxides, Ge Wei, an associate researcher at the research group, used ionic liquids to control transitions of more than four orders of magnitude of metal insulators in La0.8Sr0.2MnO3 films (Figure 1). In cooperation with the researcher Gu Lin, the spherical aberration-corrected scanning TEM technique directly confirmed the oxygen vacancies in the La0.8Sr0.2MnO3 film after gate compression (Fig. 2). The XAS results were measured in collaboration with Beijing Institute of Synchrotron Radiation Research Associate Wang Jiaou. Also confirmed the presence of oxygen vacancies. The study found that the presence of oxygen vacancies is closely related to the water content of the ionic liquids used, and the more water content the regulation effect is (Figure 3). After thoroughly discussing with researcher Hu Yongsheng, Li Wei, Jin Kui, and Guo Xiangxin, a researcher at the Shanghai Institute of Ceramics, he wrote the electrochemical reaction equation of the process. This work revealed for the first time that the use of ionic liquids to modulate oxides can cause electrochemical vacancies between the ionic liquids and the oxides to generate oxygen vacancies, resulting in a great change in the physical properties of the material. The phenomenon of ionic liquids regulating the properties of oxides is likely to exist in a variety of regulatory mechanisms that require careful handling.
The results of this study are published in Adv.Mater.Interfaces2, 1500407 (2015). This work was supported by the Chinese Academy of Sciences, the "973" project of the Ministry of Science and Technology, the "863" project, and the National Natural Science Foundation.
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